Product Summary
The CYDM064B16-55BVXI is a low-power CMOS 4K, 8K, 16K x 16 dual-port static RAM.
Parametrics
CYDM064B16-55BVXI maximum ratings: (1)Storage Temperature: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –55℃ to +125℃; (3)Supply Voltage to Ground Potential: –0.5V to +3.3V; (4)DC Voltage Applied to Outputs in High Z State: –0.5V to VCC + 0.5V; (5)DC Input Voltage: –0.5V to VCC + 0.5V; (6)Output Current into Outputs (LOW): 90 mA.
Features
CYDM064B16-55BVXI features: (1)True dual ported memory cells that allow simultaneous access of the same memory location; (2)4, 8, or 16K × 16 organization; (3)Ultra Low operating power: Active: ICC = 15 mA (typical) at 55 ns; Standby: ISB3 = 2 μA (typical); (4)Small footprint: available in a 6x6 mm 100-pin Pb-free vfBGA; (5)Port independent 1.8V, 2.5V, and 3.0V I/Os; (6)Full asynchronous operation; (7)Automatic power down; (8)Pin select for Master or Slave; (9)Expandable data bus to 32-bits with Master or Slave chip select when using more than one device; (10)On-chip arbitration logic; (11)Semaphores included to permit software handshaking between ports; (12)Input read registers and output drive registers; (13)INT flag for port-to-port communication; (14)Separate upper-byte and lower-byte control; (15)Industrial temperature ranges.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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CYDM064B16-55BVXI |
Cypress Semiconductor |
SRAM 64K 4Kx16 MoBL Dual Port IND |
Data Sheet |
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CYDM064B16-55BVXIT |
Cypress Semiconductor |
SRAM 64K 4Kx16 MoBL Dual Port IND |
Data Sheet |
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